Transistors Basics: MOSFET

SOLVED:Sketch the transfer and drain characteristics of an n -channel depletion-type MOSFET with ID S S=12 mA and VP=-8 V for a range of VG S=-VP to VG S=1 V

Design an ideal silicon n-channel depletion mode MOSFET with a polysilicon gate to have a threshold voltage of VT=-0.65  V. Assume an oxide thickness of t0 x=300 Å, a channel length of L=1.25 μm, and a nominal value of Qs s^'=1.5 ×10^11  cm^-2 . It is desired to have a drain current of ID(sat)=50 μA at VG S=0 . Determine the type of gate, substrate doping concentration, and channel width required. | Numerade

One curve of an n-channel MOSFET is characterized by the following parameters: ID(sat)=2 ×10^-4  A, VD S(sat)=4  V, and VT=0.8  V (a) What is the gate voltage? (b) What is the value of the conduction parameter? (c) If VG=2  V and VD S=2  V, determine ID. (d) If VG=3  V and VD S=1  V, determine ID. (e) For each of the conditions given in (c) and (d), sketch the inversion charge density and depletion region through the channel. | Numerade

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