The origins of flash memory can be traced back to the development of the floating-gate MOSFET (FGMOS), also known as the floating-gate transistor. The original MOSFET was invented at Bell Labs between 1955 a… 展开

Flash memory stores information in an array of memory cells made from floating-gate transistors. In single-level cell (SLC) devices, each cell stores only one bit of information. Multi-level cell (MLC) devices, including … 展开

One limitation of flash memory is that it can be erased only a block at a time. This generally sets all bits in the block to 1. Starting with a freshly erased block, any location within that block can be programmed. Ho… 展开

The low-level interface to flash memory chips differs from those of other memory types such as DRAM, ROM, and EEPROM, which support bit-alterability (both zero to one and one to zero) and random access via externally acces… 展开

NOR and NAND flash differ in two important ways:
• The connections of the individual memory cells are different.
• The interface provided for reading and writing the memory is different; NOR al… 展开