Using both faces of polar semiconductor wafers for functional …
2024年9月25日 · The group III element fractions and doping profiles for both the LED and HEMT structures are presented in the time-of-flight secondary ion mass spectrometry (ToF-SIMS) data shown in Extended Data...
Quantitative depth profiling of Al in SiC using time of flight ...
2021年4月5日 · We are not aware of any manuscript that describes the use of time of flight–secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis.
TOF-SIMS characterization of industrial materials: from silicon wafer ...
2003年1月15日 · Introduction. Static SIMS using time-of-flight (TOF) mass spectrometer has proven to be a powerful technique for the chemical characterization of the constituents in the upper monomolecular layer of various industrial materials.
Quantitative TOF-SIMS analysis of metal contamination on silicon wafers …
2000年4月3日 · This work aims at obtaining TOF-SIMS calibration for the quantification of metals on oxidized silicon wafers. Standards with different amounts of various elements are prepared by dipping and spinning methods. TOF-SIMS results are compared with TXRF, VPD-AAS and …
TOF-SIMS Analysis Using Bi - ACS Publications
2019年8月5日 · We combined the Bi 3 +-SIMS with Ar 1000 + sputtering to etch the surface of Au nanoparticles supported by a Si wafer. We determined that when Bi 3 + -SIMS is coupled with a relatively short Ar 1000 + sputtering time, analyses of the secondary ions, both atomic species and clusters, can be useful for obtaining information on the local chemical ...
Trace metal contamination quantification on Silicon wafers using ToF …
2011年1月19日 · ToF-SIMS is now widely used in the microelectronic industry for contamination monitoring of silicon wafers, particularly for metallic elements. However, the accuracy of the technique is still questioned considering the discrepancies, sometimes up to a factor of 10, observable in existing Relative Sensitivity Factors (RSF) databases.
This work aims at obtaining TOF-SIMS calibration for the quantification of metals on oxidized silicon wafers. Standards with different amounts of various elements are prepared by dipping and ...
Ultrathin, wafer-scale hexagonal boron nitride on dielectric …
2017年3月22日 · We provide clear evidence based on cross-sectional TEM and ToF-SIMS that the h-BN films grow by diffusion and segregation (D-SS) of B and N from bulk metal upon cooling. We find that the cooling rates employed in our experiments have no effect on the segregation kinetics in thin films due to the high B and N diffusivities.
Quantification issues of trace metal contaminants on silicon wafers …
2004年6月15日 · TOF-SIMS is a relatively new technique for analyzing contaminants on wafer surfaces in a “routine” contamination laboratory environment. It is a versatile method that offers a wide field of application, especially in the semiconductor industry (organic contamination, particles, imaging and depth profiling).
Applications of TOF-SIMS Ion Color Mapping Technology in ...
2024年7月15日 · Time-of-flight secondary ion mass spectrometry (TOF-SIMS) can be used for high-end failure analysis and materials analysis and characterization. It has high sensitivity, large mass range, high detection efficiency, and full element analysis. It can be applied to compositional analysis of organic and inorganic materials of all elements …