Diffusion barrier - Wikipedia
A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals. It is done to act as a barrier to protect either one of the metals from corrupting the other.
Manipulating the diffusion energy barrier at the lithium metal ...
2024年4月10日 · We elucidate the correlation among Li+ transference number, diffusion behavior, concentration gradient, and the stability of the lithium metal electrode by integrating phase field simulations...
Material screening for future diffusion barriers in Cu …
2024年6月4日 · In this work, several metal alloys were investigated regarding their performance as a diffusion barrier in copper interconnects. It was demonstrated that the Miedema model is an excellent tool to predict the stable amorphous range of binary and also ternary alloys with thicknesses as low as 15 nm.
Review—Ruthenium as Diffusion Barrier Layer in ... - IOPscience
2018年12月10日 · Ruthenium is one of the most promising candidates to replace tantalum and titanium based diffusion barrier layers in microelectronics. Its unique properties allow the deposition of ultrathin layers with controlled thickness by means of …
In this work, a high-throughput screening strategy [17,18] is developed to evaluate potential metallic diffusion barri-ers for weldable electrodes (Ni, Fe, Cu, and Ag). Specifically, we employed hot pressing mixtures of weldable metals (as matrix) and various metallic barrier candidates with a post-annealing at 850 K.
Diffusion Barriers in Semiconductor Devices/Circuits
2005年1月1日 · The conducting metal-oxygen diffusion barrier (Ru2O and Mo-O) can survive thermal anneals up to the temperature range of 500 to 600°C. Cu-oxide tends to form at the metal-oxygen/Cu interface at higher temperatures. …
Metal-ceramic diffusion barrier nanocomposite coatings on …
2022年11月1日 · Chemical diffusion barrier coatings based on metal oxides are proposed to protect against oxygen ion diffusion either inward or outwards and to protect the metallic substrates for long durability [8].
Screening metal diffusion barriers for thermoelectric Bi
2023年12月26日 · In this work, Ti was screened out from 13 metals in total as an effective barrier material between p-type Bi0.5Sb1.5-Te3 thermoelectric materials and Ni electrodes, because of its low diffusion coefficient and long-term interfacial stability.
Diffusion barrier properties of atomic layer deposited TiSiN films
2022年5月15日 · Atomic Layer Deposition processed (ALD) titanium silicon nitride (TiSiN) thin film was investigated as a diffusion barrier. TiSiN successfully reduced the out-diffusion of boron from the poly-Si layer on the Si substrate by 10 times and fluorine into the substrate from the subsequent W deposition by 2 times.
This chapter focuses on the diffusion barriers for application in microelectronics, and especially between semiconductor and insulator or metal, insulator, and metal, and between different metal systems used.