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Compoundsemiconductor.net
3 天
Researchers develop tech for future fast-charging stations
Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...
Compoundsemiconductor.net
3 天
Vermont GaN Tech Hub awarded nearly $24M
The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...
Compoundsemiconductor.net
3 天
Onsemi completes buy-out of Qorvo SiC JFET business
Onsemi says the addition SiC JFET technology will complement its existing EliteSiC power portfolio and enable the company to ...
Compoundsemiconductor.net
3 天
Quantum Science announces Innovate UK funding
The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...
Compoundsemiconductor.net
4 天
III-V Epi advocates GaAs for new lasers
Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many ...
Compoundsemiconductor.net
4 天
Boosting AlN-on-AlN Schottky barrier diode performance
Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...
Compoundsemiconductor.net
4 天
EPC adds new reference design for motor drives
Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...
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