IEEE1 个月
Characterization of Silicon Carbide Low-Voltage n/p-channel MOSFETs at High Temperatures
Abstract: SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300° C. The behaviors of these low voltage devices ...
Engineering360 News1 个月
Power MOSFET Information
Like all MOSFETs, power MOSFETs switch and regulate a current that flows between the source (S ... The introduction of automotive-grade MOSFETs, such as the PolarP P-Channel enhancement mode power ...