defect-free 300mm wafers. To better control wafer-edge defects throughout fab processing, and for fusion and hybrid bonding, engineers are fine tuning new and existing processes. These include a ...

Infineon has introduced 300-mm power GaN wafer technology within a scalable, high-volume manufacturing environment. The company notes that 300-mm wafers offer significant technological and efficiency ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer ...

The company's Q2 2024 sales exceeded forecasts, driven by a rebound in the 300-mm wafer market and favorable currency and cost cuts. Sumco faces significant challenges, including negative cash ...

Typically, the exposed photoresist (hit by the light) is washed off, creating a ‘stencil’ on the silicon wafer. Subsequent machines etch away ... more gates than the horizontal approach.

announced today the launch of its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers). Substrate and epi-wafer shipments from the company at 350 micron and 500 micron thickness are now underway.

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...

PITTSBURGH, Sept. 26, 2024 (GLOBE NEWSWIRE) -- Coherent Corp. (NYSE: COHR), a global leader in materials, networking, and laser technologies, announced today the launch of its 200 mm silicon ...

As a dedicated manufacturer of both SiC substrates and epitaxial wafers, Coherent combines these elements to deliver exceptional quality, performance, and reliability. The new 200 mm SiC epi ...