Vishay’s VOFD341A and VOFD343A IGBT and MOSFET drivers, available in stretched SO-6 packages, provide peak output current of ...

Vishay Intertechnology, Inc. has introduced two new IGBT and MOSFET drivers in the compact, high-isolation stretched SO-6 package. Delivering high peak output currents of 3A and 4A, respectively, the ...

Navitas Showcases World's First 8.5kW AI Data Center Power Supply Using GaN & SiC at China's Premier Power Electronics ...

GaN now represents one of the fastest-growing segments of the semiconductor industry, with compound annual growth estimates ...

Navitas Semiconductor has announced it will preview several GaN and SiC breakthroughs at electronica 2024 (November 12th- ...

Navitas Previews Advances in GaN and SiC Technologies, Including Industry's First 8.5 kW AI Data Center Power Supply at ...

Specifically, the converter under investigation consists of a Power Factor Correction (PFC) boost stage and a secondary buck stage, where the latter features a high frequency GaN switching transistor.

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of two innovative IGBT and MOSFET drivers, the VOFD341A and ...

Stretched SO-6 packaged devices enable compact designs, fast switching, and high voltages Vishay Intertechnology has ...

The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages while still maintaining enough voltage safety margin. The ...

Electromagnetic-interference (EMI) disturbances are on the rise and becoming more intense due to more complex and powerful ...

Understanding the latest circuit protection, power management and switching solutions delivers fully protected cordless power ...