Intel Foundry unveiled new breakthroughs to help drive the semiconductor industry forward into the next decade and beyond.

Innoscience Technology has launched four GaN-on-Silicon enhancement mode high electron mobility transistors (HEMT) within their En-FCQFN top-side cooling package, yielding substantial improvements in ...

Abstract: This study tested fluorine doping on various regions of the ferroelectric charge trap gate stack (FEG stack). Fluorine doping effectively reduces oxygen vacancies in the dielectric layer, ...

Our team at Intel Technology Research has anticipated these trends and has already devoted many years to addressing them. Back in 2019 we developed the industry’s first enhancement-mode (E-mode) GaN ...

Power-converter density and efficiency can be improved using techniques like GaN HEMTs in a half-bridge configuration.

The global power MOSFET market is on the brink of a substantial valuation, projected to reach USD 24,700 million by 2023. The growth is primarily driven by the burgeoning interest ...

Our teams have worked tirelessly to ensure our products not only meet but exceed the expectations for reliability in the most demandi ...

There’s no evidence that male enhancement pills can increase penis size, but for people experiencing erectile dysfunction, there are treatment options available. The male enhancement pills ...

Abstract: A frequency tunable flexible bandpass filter (BPF) based on electrical tuning of organic electrochemical transistors (OECTs) is designed and fabricated. Microstrip BPF is prepared by screen ...