Extreme-ultraviolet (EUV) lithography involves wavelengths of 13.5 nm, and thus represents the next significant step in the reduction of feature sizes on integrated circuits. However, the move ...
1). Figure 1: Since the mid-1980s, the wavelength of light used in lithography systems has reduced by almost half from 365 nm to 193 nm. Extreme ultraviolet (EUV) lithography is the next step in ...
As a verification, an in-house built cascaded RFL with a wavelength tuning range of 1210-1270 nm is employed as the pump source of the Raman amplifier, and a 1.3 μm broadband SLD source is used as ...