The desaturation protection offers overload and short-circuit protection for the external power switch ... The driver’s integrated Miller Clamp architecture provides a pre-driver for an external ...

Abstract: SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300° C. The behaviors of these low voltage devices ...

Abstract: While gate workfunction fluctuation causes the threshold voltage shift of transistors, it leads to off- and on-state current variations with a given supply voltage and circuit performance ...