MOSFETs XPJ101N04N8R and XPJ102N09N8R as part of a new series of power devices. In recent years, the demand for lowered power consumption, miniaturisation, and improved efficiency has grown in ...
The REXFET-1 process also allows the new MOSFETs to offer a 10% reduction in Qg characteristics (the amount of charge needed to apply voltage to a gate), and a 40% reduction in Qgd (the amount of ...
RENESAS ELECTRONICS RBA300N10EANS and RBA300N10EHPF 100V high-power N-Channel MOSFETs deliver high-current switching performance for applications such as motor control, battery management systems, ...
The new MOSFETs offer a 30% lower on-resistance, a 40% reduction in gate-drain charge, and a 50% smaller package size. Renesas Electronics Corporation has launched new 100V high-power N-Channel ...
Renesas has introduced 100V high-power N-Channel MOSFETs that claim to deliver industry-leading high-current switching performance. Renesas has developed ...