defect-free 300mm wafers. To better control wafer-edge defects throughout fab processing, and for fusion and hybrid bonding, engineers are fine tuning new and existing processes. These include a ...

But cryo etch presents some intriguing options, even if it’s unclear whether the industry can bring it into production. What is etch? Etch, the process step that etches or removes materials from the ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

Infineon has introduced 300-mm power GaN wafer technology within a scalable, high-volume manufacturing environment. The company notes that 300-mm wafers offer significant technological and efficiency ...

There are five important characteristics to consider in selecting any dry etch process. These are rate, feature profiles, compositional selectivity, damage and uniformity across the wafer ... (ratio ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer ...

While wafer thickness appears to be gradually unifying, wafer size and shape is a different story. Between 2013 and 2017, 156 mm “M0” and 156.75 mm “M2” wafers dominated the market upon ...

The agreement outlines up to $1.6 billion in proposed direct funding under the CHIPS and Science Act to support the construction of three 300mm semiconductor wafer fabs in Texas and Utah.

The process modules provide high-throughput, outstanding uniformity, high-precision, and low-damage processes for wafer sizes ranging up to 200 mm. This helps in several ... clean smooth vertical ...

Its electronic chemicals segment provides wet process chemicals to the semiconductor industry, to clean and etch silicon wafers in the production of semiconductors. Its wood preserving chemicals ...

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...