Vishay Intertechnology, Inc. has introduced two new IGBT and MOSFET drivers in the compact, high-isolation stretched SO-6 package. Delivering high peak output currents of 3A and 4A, respectively, the ...

Vishay’s VOFD341A and VOFD343A IGBT and MOSFET drivers, available in stretched SO-6 packages, provide peak output current of ...

The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages, while still maintaining enough voltage safety margin. The ...

Navitas Semiconductor has announced it will preview several GaN and SiC breakthroughs at electronica 2024 (November 12th- ...

Navitas Previews Advances in GaN and SiC Technologies, Including Industry’s First 8.5 kW AI Data Center Power Supply at ...

Navitas Showcases World's First 8.5kW AI Data Center Power Supply Using GaN & SiC at China's Premier Power Electronics ...

GaN now represents one of the fastest-growing segments of the semiconductor industry, with compound annual growth estimates ...

Major technology updates include the world's first 8.5kW power supply for AI and hyperscale data centres, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.

Abstract: In power conversion applications utilizing GaN HEMTs at elevated switching frequencies, the predominant source of power loss is attributed to switching, which becomes particularly sensitive ...

Specifically, the converter under investigation consists of a Power Factor Correction (PFC) boost stage and a secondary buck stage, where the latter features a high frequency GaN switching transistor.

We’ll explain how this works and what you need to ensure that your iPhone charging experience will be as fast and smooth as possible. We’ve written a comprehensive guide to fast charging ...