Magnachip has doubled production of its MXT low voltage trench power MOSFETs for mobile applications. As mobile devices ...

An enhancement MOSFET needs a voltage applied to a gate ... polarity of the Gate signal and how it affects the device: An N-Channel device is activated when a positive voltage is applied to ...

By contrast, a lateral MOSFET's source and drain terminals are on opposite sides of the device, with the gate situated on the n-doped channel. "Diffusion" refers to the device's manufacturing process: ...

Industry top-class overcharge detection voltage accuracy of ±15mV — The battery protection ICs achieves an industry top-class ...

To drive a MOSFET requires more than merely a logic level output, there’s a requirement to charge the device’s gate which necessitates a suitable buffer amplifier. A variety of different ...

Adapting cutting-edge medium-voltage processes to meet the stringent reliability requirements of automotive products, ROHM developed 10 N-channel MOSFET models (N-channel MOSFETs conduct when a ...

Recent enhancements to the classic Bipolar junction transistors show that the classic transistor has plenty of life left and ...

When the power MOSFET works in linear mode, the main features are limited only to managing temperature and robustness in what is known as thermal instability or thermal runway. The operation in linear ...

MXT LV MOSFETs, which are based on Magnachip’s Super Short Channel FET (SSCFET ®) technology. Additionally, these MXT LV MOSFETs are manufactured using a 100μm-thin wafer-level chip scale ...

Infineon Technologies AG  has now introduced the EiceDRIVER 1EDL8011, a high-side gate driver designed to protect ...

Silva Piovani, Daniel E. Schneider, Marcio Cherem and Galup-Montoro, Carlos 2010. Design of a low power CMOS class-D amplifier for hearing aids. p. 1.