JXP2003MRG采用先进的沟槽技术，提供卓越的RDS（ON）和低栅极电荷。互补MOSFET可用于形成水平偏移的高侧开关，以及许多其他应用。 RDS (ON) (Typ.)=32mΩ @VGS=2.5V ...

There are two basic types of MOSFET RF transistors: N-channel and P-channel. N-channel devices conduct through electrons. P-channel devices conduct through “holes”. With both types of devices, the ...

By contrast, a lateral MOSFET's source and drain terminals are on opposite sides of the device, with the gate situated on the n-doped channel. "Diffusion" refers to the device's manufacturing process: ...